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| STGW40NC60WD 40 A - 600 V - ultra fast IGBT Features Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode 2 1 3 Applications High frequency inverters, UPS Motor drivers HF, SMPS and PFC in both hard switch and resonant topologies Welding Induction heating Figure 1. TO-247 Internal schematic diagram Description This IGBT utilizes the advanced PowerMESHTM process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order code Marking GW40NC60WD Package TO-247 Packaging Tube STGW40NC60WD February 2008 Rev 3 1/14 www.st.com 14 Contents STGW40NC60WD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STGW40NC60WD Electrical ratings 1 Electrical ratings Table 2. Symbol VCES IC (1) IC ICL (1) (2) Absolute maximum ratings Parameter Collector-emitter voltage (VGE = 0) Collector current (continuous) at 25 C Collector current (continuous) at 100 C Turn-off latching current Pulsed collector current Gate-emitter voltage Diode RMS forward current at TC=25 C Surge non repetitive forward current (tp=10 ms sinusoidal) Total dissipation at TC = 25 C Operating junction temperature Value 600 70 37 230 230 20 30 120 250 - 55 to 150 Unit V A A A A V A A W C ICP (3) VGE IF IFSM PTOT Tj 1. Calculated according to the iterative formula: T -T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C 2. Vclamp = 80%(VCES), Tj = 150 C, RG = 10 , VGE= 15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Symbol Rthj-case Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case max (IGBT) Thermal resistance junction-case max (diode) Thermal resistance junction-ambient max Value 0.5 1.5 50 Unit C/W C/W C/W 3/14 Electrical characteristics STGW40NC60WD 2 Electrical characteristics (TCASE=25 C unless otherwise specified) Table 4. Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES gfs Static Parameter Test conditions Min. 600 2.1 1.9 3.75 2.5 Typ. Max. Unit V V V V A mA nA S Collector-emitter breakdown IC = 1 mA voltage (VGE = 0) Collector-emitter saturation voltage Gate threshold voltage Collector-emitter cut-off current (VGE = 0) Gate-emitter cut-off current (VCE = 0) Forward transconductance VGE= 15 V, IC= 30 A VGE= 15 V, IC= 30 A, TC=125 C VCE= VGE, IC= 250A VGE = 600 V VGE = 600 V, TC=125 C VGE = 20 V VCE = 15 V, IC= 30 A 5.75 500 5 100 20 Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. 2900 298 59 126 16 46 Max. Unit pF pF pF VCE = 25 V, f = 1 MHz, VGE= 0 VCE = 390 V, IC = 30 A, VGE = 15 V (see Figure 18) nC nC nC 4/14 STGW40NC60WD Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay timE Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390 V, IC = 30 A , RG= 10 VGE= 15 V (see Figure 17) VCC = 390 V, IC = 30 A , RG= 10 VGE= 15 V, TC= 125 C (see Figure 17) VCC = 390 V, IC = 30 A, , RGE = 10 VGE =15 V (see Figure 17) VCC = 390 V, IC = 30 A, RGE=10 , VGE =15 V, TC=125 C (see Figure 17) 26 168 36 54 213 67 ns ns ns ns ns ns Min. Typ. 33 12 2600 32 14 2300 Max. Unit ns ns A/s ns ns A/s Table 7. Symbol Eon (1) Eoff(2) Ets Eon (1) Eoff (2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390 V, IC = 30 A , RG= 10 VGE= 15 V (see Figure 17) VCC = 390 V, IC = 30 A , RG= 10 VGE= 15 V, TC= 125 C (see Figure 17) Min Typ. 302 349 651 553 750 1303 Max Unit J J J J J J 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25 C and 125 C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics STGW40NC60WD Table 8. Symbol VF trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 30 A IF = 30 A, TC = 125 C IF = 30 A, VR = 50 V, di/dt =100 A/s (see Figure 20) IF = 30 A, VR = 50 V, TC= 125 C, di/dt =100 A/s (see Figure 20) Min Typ. 2.4 1.8 45 56 2.55 100 290 5.8 Max Unit V V ns nC A ns nC A 6/14 STGW40NC60WD Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Collector-emitter on voltage vs collector current Figure 7. Normalized gate threshold vs temperature 7/14 Electrical characteristics Figure 8. Normalized breakdown voltage vs temperature Figure 9. STGW40NC60WD Gate charge vs gate-emitter voltage Figure 10. Capacitance variations Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14 STGW40NC60WD Figure 14. Thermal impedance Electrical characteristics Figure 15. Turn-off SOA Figure 16. Emitter-collector diode characteristics IFM(A) 120 110 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 Tj=25C (Maximum values) Tj=125C (Typical values) Tj=125C (Maximum values) VFM(V) 9/14 Test circuit STGW40NC60WD 3 Test circuit Figure 18. Gate charge test circuit Figure 17. Test circuit for inductive load switching Figure 19. Switching waveforms Figure 20. Diode recovery times waveform 10/14 STGW40NC60WD Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGW40NC60WD TO-247 mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max . 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/14 STGW40NC60WD Revision history 5 Revision history Table 9. Date 8-Jun-2006 08-Nov-2006 01-Feb-2008 Document revision history Revision 1 2 3 First release Modified Dynamic Updated Table 7 Changes 13/14 STGW40NC60WD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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